Light emitting structure and mount

ABSTRACT

In a method according to embodiments of the invention, a light emitting structure comprising a plurality of light emitting diodes (LEDs) is provided. Each LED includes a p-contact and n-contact. A first mount and a second mount are provided. Each mount includes anode pads and cathode pads. The anode pads are aligned with the p-contacts and the cathode pads are aligned with the n-contacts. The method further includes mounting the light emitting structure on one of the first and second mounts. An electrical connection on the first mount between the plurality of LEDs differs from an electrical connection on the second mount between the plurality of LEDs. The first mount is operated at a different voltage than the second mount.

FIELD OF THE INVENTION

The present invention relates to a light emitting structure that may bemounted on different mounts, or on a single mount in differentorientations, in order to operate the light emitting structure atdifferent voltages.

BACKGROUND

Semiconductor light-emitting devices including light emitting diodes(LEDs), resonant cavity light emitting diodes (RCLEDs), vertical cavitylaser diodes (VCSELs), and edge emitting lasers are among the mostefficient light sources currently available. Materials systems currentlyof interest in the manufacture of high-brightness light emitting devicescapable of operation across the visible spectrum include Group III-Vsemiconductors, particularly binary, ternary, and quaternary alloys ofgallium, aluminum, indium, and nitrogen, also referred to as III-nitridematerials. Typically, III-nitride light emitting devices are fabricatedby epitaxially growing a stack of semiconductor layers of differentcompositions and dopant concentrations on a sapphire, silicon carbide,III-nitride, or other suitable substrate by metal-organic chemical vapordeposition (MOCVD), molecular beam epitaxy (MBE), or other epitaxialtechniques. The stack often includes one or more n-type layers dopedwith, for example, Si, formed over the substrate, one or more lightemitting layers in an active region formed over the n-type layer orlayers, and one or more p-type layers doped with, for example, Mg,formed over the active region. Electrical contacts are formed on the n-and p-type regions.

U.S. Pat. No. 6,547,249 teaches in the abstract “Series or parallel LEDarrays are formed on a highly resistive substrate, such that both the p-and n-contacts for the array are on the same side of the array. Theindividual LEDs are electrically isolated from each other by trenches orby ion implantation. Interconnects deposited on the array connects thecontacts of the individual LEDs in the array. In some embodiments, theLEDs are III-nitride devices formed on sapphire substrates . . . . Inone embodiment, multiple LEDs formed on a single substrate are connectedin series. In one embodiment, multiple LEDs formed on a single substrateare connected in parallel.”

SUMMARY

It is an object of the invention to provide a plurality of differentmounts, or a single mount that can be arranged in a plurality ofdifferent orientations on which a single light emitting structure may bemounted in order to operate the light emitting structure at differentvoltages.

In a method according to embodiments of the invention, a light emittingstructure comprising a plurality of light emitting diodes (LEDs) isprovided. Each LED includes a p-contact and an n-contact. A first mountand a second mount are provided. Each mount includes anode pads andcathode pads. At least one of the anode pads is aligned with a p-contactand at least one of the cathode pads is aligned with an n-contact. Themethod further includes mounting the light emitting structure on one ofthe first and second mounts. An electrical connection on the first mountbetween the plurality of LEDs differs from an electrical connection onthe second mount between the plurality of LEDs. The first mount isoperated at a different voltage than the second mount.

Embodiments of the invention include a light emitting structureincluding a plurality of light emitting diodes (LEDs). Each LED has alight emitting layer disposed between an n-type region and a p-typeregion, a p-contact disposed on the p-type region, and an n-contactdisposed on the n-type region. The light emitting structure is attachedto a mount. The n-contacts and p-contacts are attached to the mount inone of a first orientation and a second orientation. The firstorientation is operated at a different voltage than the secondorientation.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a method according to embodiments of the invention.

FIG. 2 is a cross sectional view of a light emitting structure includingmultiple light emitting diodes.

FIG. 3 is a cross sectional view of a mount on which the light emittingstructure of FIG. 2 may be mounted.

FIG. 4 is a plan view of a light emitting structure including four LEDs.

FIGS. 5, 6, and 7 are plan views of mounts on which the light emittingstructure of FIG. 4 may be mounted. Each of the mounts illustrated inFIGS. 5, 6, and 7 may be operated at a different voltage.

FIG. 8 is a plan view of a light emitting structure including four LEDs.

FIGS. 9, 10, and 11 are plan views of mounts on which the light emittingstructure of FIG. 8 may be mounted. Each of the mounts illustrated inFIGS. 9, 10, and 11 may be operated at a different voltage.

FIG. 12 is a plan view of light emitting structure including two LEDs.

FIGS. 13 and 14 illustrate two different orientations with which thelight emitting structure of FIG. 12 may be mounted on the mount of FIG.15. Each of the orientations illustrated in FIGS. 13 and 14 may beoperated at a different voltage.

FIG. 15 is a plan view of a mount for the light emitting structureillustrated in FIG. 12.

FIGS. 16, 17, and 18 illustrate three different orientations with whicha light emitting structure with a 2×2 array of LEDs may be attached to amount. Each of the orientations illustrated in FIGS. 16, 17, and 18 maybe operated at a different voltage.

DETAILED DESCRIPTION

In embodiments of the invention, a single light emitting structureincluding multiple semiconductor light emitting devices can be attachedto multiple mounts, or a single mount that can be used in differentorientations. Different mounts, or the different orientations of asingle mount, may be operated at different voltages.

Though in the examples below the semiconductor light emitting devicesare III-nitride LEDs that emit blue or UV light, semiconductor lightemitting devices besides LEDs such as laser diodes and semiconductorlight emitting devices made from other materials systems such as otherIII-V materials, III-phosphide, III-arsenide, II-VI materials, ZnO, orSi-based materials may be used.

FIG. 1 illustrates a method according to embodiments of the invention.In block 2, a light emitting structure is provided. The light emittingstructure includes multiple light emitting devices, such as multipleLEDs. FIG. 2 is a cross sectional view of one example of a lightemitting structure, described below. FIGS. 4 and 8 are plan views ofexamples of light emitting structures, described below.

In block 4, a first mount and a second mount are provided. The lightemitting structure described in block 2 can be mounted on either mountor on both mounts. Each mount has anode pads and cathode pads whichalign with the p-contacts and the n-contacts of the light emittingstructure. FIG. 3 is a cross sectional view of a mount on which thelight emitting structure illustrated in FIG. 2 may be mounted. FIGS. 5,6, and 7, described below, are plan views of mounts that may be usedwith the light emitting structure of FIG. 4. FIGS. 9, 10, and 11,described below, are plan views of mounts that may be used with thelight emitting structure of FIG. 8. The LEDs are connected differentlyon the first mount and the second mount. Accordingly, the first mountand the second mount may be operated at different voltages.

In block 6, the light emitting structure is mounted on one of the firstand second mounts.

Though the examples below show a light emitting structure with fourLEDs, more or fewer LEDs may be used, and the LEDs may be arranged inany suitable configuration other than the 2×2 array or the linear arrayillustrated.

FIG. 2 is a cross sectional view of an example of a light emittingstructure 15. In the light emitting structure 15 of FIG. 2, one or moreIII-nitride semiconductor device structures 12 are grown on a growthsubstrate 10, as is known in the art. The growth substrate 10 may be anysuitable substrate such as, for example, sapphire, SiC, Si, GaN, or acomposite substrate. Each semiconductor structure 12 includes a lightemitting or active region sandwiched between n- and p-type regions. Ann-type region may be grown first and may include multiple layers ofdifferent compositions and dopant concentration including, for example,preparation layers such as buffer layers or nucleation layers, and/orlayers designed to facilitate removal of the growth substrate, which maybe n-type or not intentionally doped, and n- or even p-type devicelayers designed for particular optical, material, or electricalproperties desirable for the light emitting region to efficiently emitlight. A light emitting or active region is grown over the n-typeregion. Examples of suitable light emitting regions include a singlethick or thin light emitting layer, or a multiple quantum well lightemitting region including multiple thin or thick light emitting layersseparated by barrier layers. A p-type region may then be grown over thelight emitting region. Like the n-type region, the p-type region mayinclude multiple layers of different composition, thickness, and dopantconcentration, including layers that are not intentionally doped, orn-type layers.

After growth, each semiconductor structure 12 may be patterned in one ormore etching steps. For example, a metal p-contact structure 14 may beformed on the p-type layer, then for each LED, portions of the p-contact14, the p-type region, and the active region in each semiconductorstructure 12 are removed to expose a portion of the n-type region onwhich a metal n-contact structure 16 is formed. In the same or aseparate etching step, in the areas 18 between semiconductor structures12, any semiconductor material may be etched to reveal an insulatinggrowth substrate 10, or to reveal an insulating layer, such as anundoped III-nitride layer grown prior to forming the n-type region ofeach semiconductor structure 12. Groups of devices may be formed bycutting the growth substrate at the desired location 20. In someembodiments, the individual LEDs are removed from growth substrate 10and attached to a suitable host. Any suitable device may be used and theinvention is not limited to the device illustrated in cross section inFIG. 2.

FIG. 3 is a cross sectional view of a mount 25 on which the lightemitting structure of FIG. 2 may be mounted. The mount 25 illustrated inFIG. 3 includes a body 22. Body 22 is often an insulating material suchas ceramic, glass, or silicon. In the alternative body 22 may beconductive. In a mount 25 with a conductive body, one or more insulatinglayers must be formed to electrically isolate anode and cathode padsformed on the body 22. For each device, anode pads 24 and cathode pads26 are formed on one side of body 22. Anode pads 24 connect to thecorresponding p-contacts 14 on the light emitting structure 15 of FIG.2. Cathode pads 26 connect to the corresponding n-contacts 16 on thelight emitting structure 15 of FIG. 2. Several sets of pads 24 and 26may be formed on mount 25 so that the number of pad sets corresponds tothe number of light emitting semiconductor structures 12 on lightemitting structure 15. One or more pads 30 and 32 may be formed on theother side of body 22, for electrical and physical connection to anotherstructure such as a PC board. Pads 30 and 32 may be electricallyconnected to anode pads 24 and cathode pads 26 by vias formed on orwithin body 22 (not shown in FIG. 3).

Though in the mounts described below, the operating voltages describedfor the mounts assume that the individual LEDs attached to the mount areoperated at a forward bias voltage of 3V, other operating voltages forthe mounts may be used if one or more of the LEDs are operated at aforward bias voltage other than 3V.

FIG. 4 illustrates a light emitting structure including four LEDs 34,36, 38, and 40 arranged in a 2×2 array. The view of FIG. 4 illustratesthe arrangement of n-contacts 16 and p-contacts 14 as the light emittingstructure is attached to the mounts illustrated in FIGS. 5, 6, and 7.According, FIG. 4 is a plan view of the n-contacts and p-contacts ofFIG. 2 as they would appear if viewed from the top of substrate 10through the LEDs. Each LED includes a p-contact 14 and an n-contact 16.FIGS. 5, 6, and 7 illustrate mounts that may be used with the lightemitting structure illustrated in FIG. 4. Each mount includes largemetal regions, which are indicated on each of FIGS. 5, 6, and 7 byhatching. Portions of the large metal regions serve as anode pads 24 andcathode pads 26 which connect to the p-contacts 14 and n-contacts 16 oneach of LEDs 34, 36, 38, and 40. LED 34 may be attached to the mountsillustrated in FIGS. 5, 6, and 7 at positions 34A, 34B, and 34C on therespective mounts; LED 36 may be attached to the mounts illustrated inFIGS. 5, 6, and 7 at positions 36A, 36B, and 36C on the respectivemounts, and so forth. Structures such as solder and stud bumps may beused to attach the LEDs to the mount. Any suitable attach method may beused, including for example solder attach and eutectic attach.

In the mount illustrated in FIG. 5, anode pad 24 of LED position 38A isconnected to an anode contact pad 42A on the mount. Cathode pad 26 ofLED position 38A is connected to anode pad 24 of LED position 34A.Cathode pad 26 of LED position 34A is connected to anode pad 24 of LEDposition 36A. Cathode pad 26 of LED position 36A is connected to anodepad 24 of LED position 40A. Cathode pad 26 of LED position 40A isconnected to a cathode contact pad 44A on the mount. Accordingly, LEDs38, 34, 36, and 40 are connected in series when attached to the mountillustrated in FIG. 5. The structure including the light emittingstructure of FIG. 4 and the mount of FIG. 5 may be operated at 12 V forindividual LEDs operated at a forward bias voltage of 3 V.

In the mount illustrated in FIG. 6, anode pad 24 of LED position 38B isconnected to an anode contact pad 42B on the mount. The anode pads 24 ofLED positions 34B and 38B are connected. The cathode pads 26 of LEDpositions 34B and 38B are connected. Cathode pad 26 of LED position 34Bis connected to anode pad 24 of LED position 36B. The anode pads 24 ofLED positions 36B and 40B are connected. The cathode pads 26 of LEDpositions 36B and 40B are connected. Cathode pad 26 of LED position 40Bis connected to a cathode contact pad 44B on the mount. Accordingly,LEDs 38 and 34 are connected in parallel and LEDs 36 and 40 areconnected in parallel. The two groups of parallel connected LEDs areconnected in series when attached to the mount illustrated in FIG. 6.The structure including the light emitting structure of FIG. 4 and themount of FIG. 6 may be operated at 6 V for individual LEDs operated at aforward bias voltage of 3 V.

In the mount illustrated in FIG. 7, the anode pads 24 of LED positions34C, 36C, 38C, and 40C are connected to each other and to anode contactpad 42C. The cathode pads 26 of LED positions 34C, 36C, 38C, and 40C areconnected to each other and to cathode contact pad 44C. Accordingly,LEDs 34, 36, 38, and 40 are all connected in parallel when attached tothe mount illustrated in FIG. 7. The structure including the lightemitting structure of FIG. 4 and the mount of FIG. 7 may be operated at3 V for individual LEDs operated at a forward bias voltage of 3 V.

FIG. 8 is a plan view of a light emitting structure including four LEDs50, 52, 54, and 56 arranged in a linear array. Each LED includes ap-contact 14 and an n-contact 16. The view of FIG. 8 illustrates thearrangement of n-contacts 16 and p-contacts 14 as the light emittingstructure is attached to the mounts illustrated in FIGS. 9, 10, and 11.FIGS. 9, 10, and 11 illustrate mounts that may be used with the lightemitting structure illustrated in FIG. 8. Each mount includes anode pads24 and cathode pads 26 which connect to the p-contacts 14 and n-contacts16 on each of LEDs 50, 52, 54, and 56. LED 50 is attached to the mountsillustrated in FIGS. 9, 10, and 11 at positions 50A, 50B, and 50C on therespective mounts; LED 52 is attached to the mounts illustrated in FIGS.9, 10, and 11 at positions 52A, 52B, and 52C on the respective mounts,and so forth. Structures such as solder and stud bumps may be used toattach the LEDs to the mount. Any suitable attach method may be used,including for example solder attach and eutectic attach.

In the mount illustrated in FIG. 9, anode pad 24 of LED position 50A isconnected to an anode contact pad 58A on the mount. Cathode pad 26 ofLED position 50A is connected to anode pad 24 of LED position 52A.Cathode pad 26 of LED position 52A is connected to anode pad 24 of LEDposition 54A. Cathode pad 26 of LED position 54A is connected to anodepad 24 of LED position 56A. Cathode pad 26 of LED position 56A isconnected to a cathode contact pad 60A on the mount. Accordingly, LEDs50, 52, 54, and 56 are connected in series when attached to the mountillustrated in FIG. 9. The structure including the light emittingstructure of FIG. 8 and the mount of FIG. 9 may be operated at 12 V forindividual LEDs operated at a forward bias voltage of 3 V.

In the mount illustrated in FIG. 10, anode pad 24 of LED position 50B isconnected to an anode contact pad 58B on the mount. The anode pads 24 ofLED positions 50B and 52B are connected. Cathode pads 26 of LEDpositions 50B and 52B are connected. Cathode pad 26 of LED position 52Bis connected to anode pad 24 of LED position 54B. The anode pads 24 ofLED positions 54B and 56B are connected. The cathode pads 26 of LEDpositions 54B and 56B are connected. Cathode pad 26 of LED position 56Bis connected to a cathode contact pad 60B on the mount. Accordingly,LEDs 50 and 52 are connected in parallel and LEDs 54 and 56 areconnected in parallel. The two groups of parallel-connected LEDs areconnected in series when attached to the mount illustrated in FIG. 10.The structure including the light emitting structure of FIG. 8 and themount of FIG. 10 may be operated at 6 V for individual LEDs operated ata forward bias voltage of 3 V.

In the mount illustrated in FIG. 11, the anode pads 24 of LED positions50C, 52C, 54C, and 56C are connected to each other and to anode contactpad 58C. The cathode pads 26 of LED positions 50C, 52C, 54C, and 56C areconnected to each other and to cathode contact pad 60C. Accordingly,LEDs 50, 52, 54, and 56 are all connected in parallel when attached tothe mount illustrated in FIG. 11. The structure including the lightemitting structure of FIG. 8 and the mount of FIG. 11 may be operated at3 V for individual LEDs operated at a forward bias voltage of 3 V.

In some embodiments, the contacts on the light emitting structure andthe anode and cathode pads on the mount are arranged such that adifferent operating voltage are achieved with a single light emittingstructure design and a single mount design, by attaching the lightemitting structure on the mount with different orientations, asillustrated in FIGS. 12, 13, 14, and 15. FIG. 12 illustrates thearrangement of contacts on a light emitting structure including twoLEDs. FIG. 15 is a plan view of a mount on which the light emittingstructure of FIG. 12 may be mounted. FIGS. 13 and 14 illustrate twodifferent orientations with which the light emitting structure of FIG.12 may be mounted on the mount of FIG. 15. The two orientations may beoperated at different voltages.

The light emitting structure illustrated in FIG. 12 includes two LEDs 62and 64. The discussion below assumes each LED 62 and 64 is operated at aforward bias voltage of 3 V. Each LED includes 8 contact regions. LED 62includes p-contact regions 70, 75, 79, and 83 and n-contact regions 71,74, 78, and 82. P-contact regions 70, 75, 79, and 83 are electricallyconnected to each other. N-contact regions 71, 74, 78, and 82 areelectrically connected to each other. LED 64 includes p-contact regions77, 80, 81, and 85 and n-contact regions 72, 73, 76, and 84. P-contactregions 77, 80, 81, and 85 are electrically connected to each other.N-contact regions 72, 73, 76, and 84 are electrically connected to eachother. The contact regions of a given polarity on a single LED may beelectrically connected to each other for example by a metal dielectricstack. The redistribution of contacts via one or more metal anddielectric layers is known in the art. LEDs 62 and 64 are electricallyisolated from each other.

FIG. 15 illustrates an arrangement of metal pads on a mount that may beused with the light emitting structure illustrated in FIG. 12. The metalpads may be formed on, for example, an insulating body, as describedabove. Ten metal pads 90A-90J and portions of a cathode contact pad 86and an anode contact pad 88 align with the 16 n- and p-contact regions70-85 on the two LEDs 62 and 64 illustrated in FIG. 12. Two of the metalpads 92A and 92B provide electrical connection between the two LEDs 62and 64.

FIG. 13 illustrates an orientation with which the light emittingstructure illustrated in FIG. 12 may be attached to the mountillustrated in FIG. 15. The orientation illustrated in FIG. 13 may beoperated at 6 V. FIG. 14 illustrates an orientation with which the lightemitting structure illustrated in FIG. 12 may be attached to the mountillustrated in FIG. 15. The orientation illustrated in FIG. 14 may beoperated at 3 V. The light emitting structure in FIG. 14 is rotated 180°relative to the orientation illustrated in FIG. 13.

In the 6 V structure illustrated in FIG. 13, the p-contact pad 75 of LED62 and the n-contact pad 76 of LED 64 are attached to metal pad 92A, andthe p-contact pad 83 of LED 62 and the n-contact pad 84 of LED 64 areattached to metal pad 92B. Accordingly, metal pads 92 electricallyconnect the p-contacts of LED 62 to the n-contacts of LED 64 such thatthe two LEDs are connected in series.

In the 3 V structure illustrated in FIG. 14, the p-contact pad 80 of LED64 and the p-contact pad 79 of LED 62 are attached to metal pad 92A, andthe n-contact pad 72 of LED 64 and the n-contact pad 71 of LED 62 areattached to metal pad 92B. Accordingly, metal pads 92 electricallyconnect the p-contacts of LEDs 62 and 64 and electrically connect then-contacts of LEDs 62 and 64 such that the two LEDs are connected inparallel.

The concepts illustrated in FIGS. 12-15—distributing the n- andp-contacts on each LED across different regions, and forming a mountthat provides different electrical connections between the LEDs based onthe orientation—may be extended to light emitting structures with morethan two LEDs. FIGS. 16, 17, and 18 illustrate light emitting structureswith four LEDs with distributed n- and p-contacts attached to a singlemount with three different orientations. Four LEDs 100, 102, 104, and106 are represented by four large squares in a 2×2 array. Each LED has36 contact regions. Both the p- and n-contact regions in FIGS. 16, 17,and 18 are represented by small squares. P-contact regions are indicatedby plus signs and n-contact regions are indicated by minus signs.Unspecified contact regions may be either p- or n-contact regions. As inFIG. 12, on a single LED, all p-contact regions are electricallyconnected to each other and all n-contact regions are electricallyconnected to each other. The discussion below assumes each LED isoperated at a forward bias voltage of 3 V, though in any of theembodiments described herein LEDs with a different forward bias voltagemay be used.

As in the mount illustrated in FIG. 15, the mount illustrated in FIGS.16, 17, and 18 includes multiple metal pads that align with p- andn-contact regions on the individual LEDs 100, 102, 104, and 106. In themount illustrated in FIGS. 16, 17, and 18, electrical connection betweenthe LEDs 100, 102, 104, and 106 is provided by metal pads that span twocontact regions at six locations 112, 114, 116, 118, 120, and 122. Themount includes a cathode contact pad 108 and an anode contact pad 110.

FIG. 16 illustrates an orientation that may be operated at 12 V. In FIG.16, at metal pads 116 and 118, n-contact regions of LED 106 areconnected to p-contact regions of LED 102, such that LEDs 106 and 102are connected in series. At metal pads 112 and 114, n-contact regions ofLED 104 are connected to p-contact regions of LED 106, such that LEDs104 and 106 are connected in series. At metal pads 120 and 122,n-contact regions of LED 100 are connected to p-contact regions of LED104, such that LEDs 100 and 104 are connected in series. Accordingly,all four LEDs 100, 102, 104, and 106 are connected in series in theorientation illustrated in FIG. 16.

FIG. 17 illustrates an orientation that may be operated at 3 V. In theorientation illustrated in FIG. 17, the light emitting structure isrotated 90° relative to the orientation illustrated in FIG. 16. At metalpad 116 p-contact regions on LEDs 102 and 100 are connected. At metalpad 118, n-contact regions on LEDs 102 and 100 are connected. LEDs 102and 100 are therefore connected in parallel. At metal pad 112, p-contactregions on LEDs 102 and 106 are connected. At metal pad 114, n-contactregions on LEDs 102 and 106 are connected. LEDs 102 and 106 areconnected in parallel. At metal pad 120, p-contact regions on LEDs 106and 104 are connected. At metal pad 122, n-contact regions on LEDs 106and 104 are connected. LEDs 106 and 104 are connected in parallel.Accordingly, all four LEDs 100, 102, 104, and 106 are connected inparallel in the orientation illustrated in FIG. 17.

FIG. 18 illustrates an orientation that may be operated at 6 V. In theorientation illustrated in FIG. 18, the light emitting structure isrotated 90° relative to the orientation illustrated in FIG. 17. At metalpad 116 p-contact regions on LEDs 100 and 104 are connected. At metalpad 118, n-contact regions on LEDs 100 and 104 are connected. LEDs 100and 104 are therefore connected in parallel. At metal pads 112 and 114,n-contact regions on LED 102 are connected to p-contact regions on LED100. LEDs 102 and 100 are therefore connected in series. At metal pad120, p-contact regions on LEDs 102 and 106 are connected. At metal pad122, n-contact regions on LEDs 102 and 106 are connected. LEDs 102 and106 are therefore connected in parallel. Accordingly, LEDs 106 and 102are connected in parallel and LEDs 104 and 100 are connected inparallel. The two groups of parallel-connected LEDs are connected inseries in the orientation illustrated in FIG. 18.

Having described the invention in detail, those skilled in the art willappreciate that, given the present disclosure, modifications may be madeto the invention without departing from the spirit of the inventiveconcept described herein. Therefore, it is not intended that the scopeof the invention be limited to the specific embodiments illustrated anddescribed.

1. A method comprising: providing a light emitting structure comprisinga plurality of LEDs, each LED comprising a p-contact and an n-contact;providing a first mount and a second mount, each mount comprising anodepads and cathode pads, wherein at least one of the anode pads is alignedwith at least one p-contact and at least one of the cathode pads isaligned with the at least one n-contact; and mounting the light emittingstructure on one of the first and second mounts, wherein an electricalconnection on the first mount between the plurality of LEDs differs froman electrical connection on the second mount between the plurality ofLEDs, wherein the first mount is operated at a different voltage thanthe second mount.
 2. The method of claim 1 wherein an electricalconnection on the first mount comprises a series connection between twoof the plurality of LEDs and an electrical connection on the secondmount comprises a parallel connection between two of the plurality ofLEDs.
 3. The method of claim 1, wherein the light emitting structurecomprises four LEDs, wherein an electrical connection on the first mountcomprises a series connection among all four LEDs, wherein an electricalconnection on the second mount comprises a parallel connection among allfour LEDs, wherein the first mount is operated at a higher voltage thanthe second mount.
 4. The method of claim 1 wherein the light emittingstructure comprises four LEDs; wherein an electrical connection on thefirst mount comprises a series connection between first and second LEDs,a first parallel connection between first and third LEDs and a secondparallel connection between second and fourth LEDs, wherein anelectrical connection on the second mount comprises a parallelconnection among all four LEDs, wherein the first mount is operated at ahigher voltage than the second mount.
 5. A device comprising: a lightemitting structure, the light emitting structure comprising: a pluralityof LEDs, each LED comprising a light emitting layer disposed between ann-type region and a p-type region; a p-contact disposed on the p-typeregion; and an n-contact disposed on the n-type region; and a mount,wherein the light emitting structure is attached to the mount, whereindirect current electricity is supplied to at least two terminals on themount, wherein the n-contacts and p-contacts are attached to the mountin one of a first orientation and a second orientation, wherein thepower supplied to the first orientation is operated at a differentvoltage than the second orientation.
 6. The device of claim 5 wherein inthe first orientation, the light emitting structure is rotated relativeto the second orientation.
 7. The device of claim 5 wherein in the firstorientation, the light emitting structure is rotated 90° relative to thesecond orientation.
 8. The device of claim 5 wherein in the firstorientation, the light emitting structure is rotated 180° relative tothe second orientation.
 9. The device of claim 5 wherein for each LED,the n-contact is divided into a plurality of first regions electricallyconnected to each other and the p-contact is divided in to a pluralityof second regions electrically connected to each other.
 10. The deviceof claim 9, wherein the mount comprises third segments disposed on thetop surface of an insulating body, wherein the third segments align withthe first and second segments, wherein the first segments and secondsegments align with different third segments in the first and secondorientations
 11. The device of claim 5 wherein in the first orientation,at least two of the LEDs in the plurality of LEDs are connected inseries, wherein in the second orientation, at least two of the LEDs inthe plurality of LEDs are connected in parallel.